|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
CMLDM7003 CMLDM7003G* CMLDM7003J SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are dual Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM7003 utilizes the USA pinout configuration, while the CMLDM7003J utilizes the Japanese pinout configuration. These devices offer low rDS (ON) and ESD protection up to 2kV. MARKING CODES: CMLDM7003: CMLDM7003G*: CMLDM7003J: SYMBOL VDS VDG VGS ID IDM PD PD PD TJ, Tstg JA 50 50 12 280 1.5 350 300 150 -65 to +150 357 SOT-563 CASE * Device is Halogen Free by design C30 C3G C3J UNITS V V V mA A mW mW mW C C/W MAXIMUM RATINGS: (TA=25C) Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Maximum Pulsed Drain Current Power Dissipation (Note 1) Power Dissipation (Note 2) Power Dissipation (Note 3) Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX IGSSF, IGSSR VGS=5.0V 100 IGSSF, IGSSR VGS=10V 2.0 IGSSF, IGSSR VGS=12V 2.0 IDSS VDS=50V, VGS=0V 50 BVDSS VGS=0V, ID=10A 50 VGS(th) VDS=VGS, ID=250A 0.49 1.0 VSD VGS=0V, IS=115mA 1.4 rDS(ON) VGS=1.8V, ID=50mA 1.6 3.0 rDS(ON) VGS=2.5V, ID=50mA 1.3 2.5 rDS(ON) VGS=5.0V, ID=50mA 1.1 2.0 gFS VDS=10V, ID=200mA 200 Crss VDS=25V, VGS=0, f=1.0MHz 5.0 Ciss VDS=25V, VGS=0, f=1.0MHz 50 Coss VDS=25V, VGS=0, f=1.0MHz 25 Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0 mm2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0 mm2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4 mm2 UNITS nA A A nA V V V mS pF pF pF R5 (8-January 2009) Central TM Semiconductor Corp. CMLDM7003 CMLDM7003G* CMLDM7003J SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE - MECHANICAL OUTLINE PIN CONFIGURATIONS CMLDM7003 (USA Pinout) CMLDM7003G* CMLDM7003J (Japanese Pinout) LEAD CODE: 1) GATE Q1 2) SOURCE Q1 3) DRAIN Q2 4) GATE Q2 5) SOURCE Q2 6) DRAIN Q1 MARKING CODES: CMLDM7003: C30 CMLDM7003G*: C3G * Device is Halogen Free by design LEAD CODE: 1) SOURCE Q1 2) GATE Q1 3) DRAIN Q2 4) SOURCE Q2 5) GATE Q2 6) DRAIN Q1 MARKING CODE: C3J R5 (8-January 2009) |
Price & Availability of CMLDM7003 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |